vishay siliconix SIS426DN document number: 68799 s09-1906-rev. b, 21-sep-09 www.vishay.com 1 n-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? pol ? dc/dc product summary v ds (v) r ds(on) ( ) i d (a) f q g (typ.) 20 0.0045 at v gs = 10 v 35 g 13.2 nc 0.0058 at v gs = 4.5 v 35 g orderin g information: sis426d n -t1-ge3 (lead (p b )-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom v ie w n - c hannel m os fet g d s notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manu facturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. d. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. e. maximum under steady state conditions is 81 c/w. f. based on t c = 25 c. g. package limited. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 35 g a t c = 70 c 35 g t a = 25 c 22.0 a, b t a = 70 c 20.0 a, b pulsed drain current i dm 70 continuous source-drain diode current t c = 25 c i s 35 g t a = 25 c 3.3 a, b single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 52 w t c = 70 c 43 t a = 25 c 3.7 a, b t a = 70 c 3.1 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, e t 10 s r thja 24 33 c/w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 free datasheet http:///
www.vishay.com 2 document number: 68799 s09-1906-rev. b, 21-sep-09 vishay siliconix SIS426DN notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 20 mv/c v gs(th) temperature coefficient v gs(th) /t j - 4.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 10 a 0.0033 0.0045 v gs = 4.5 v, i d = 7 a 0.0046 0.0058 forward transconductance a g fs v ds = 10 v, i d = 10 a 50 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 1570 pf output capacitance c oss 555 reverse transfer capacitance c rss 195 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 10 a 28 42 nc v ds = 10 v, v gs = 4.5 v, i d = 10 a 13.2 20 gate-source charge q gs 3.8 gate-drain charge q gd 4.0 gate resistance r g f = 1 mhz 0.2 0.70 1.4 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1 i d ? 10 a, v gen = 4.5 v, r g = 1 21 35 ns rise time t r 13 26 turn-off delay time t d(off) 29 55 fall time t f 17 30 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1 i d ? 10 a, v gen = 10 v, r g = 1 10 20 rise time t r 816 turn-off delay time t d(off) 22 40 fall time t f 816 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 35 a pulse diode forward current i sm 70 body diode voltage v sd i s = 3 a, v gs = 0 v 0.75 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 22 44 ns body diode reverse recovery charge q rr 10 20 nc reverse recovery fall time t a 11 ns reverse recovery rise time t b 11
document number: 68799 s09-1906-rev. b, 21-sep-09 www.vishay.com 3 vishay siliconix SIS426DN typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 14 2 8 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u 4 v v gs =3 v 0.0030 0.0036 0.0042 0.004 8 0.0054 0.0060 0142 8 42 56 70 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =4.5 v v gs =10 v 0 2 4 6 8 10 0 6 12 1 8 24 30 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =15 v v ds =5 v i d =10a v ds =10 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 01234 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 400 8 00 1200 1600 2000 04 8 12 16 20 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =10 v v gs =4.5 v i d =10a
www.vishay.com 4 document number: 68799 s09-1906-rev. b, 21-sep-09 vishay siliconix SIS426DN typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.004 0.00 8 0.012 0.016 0.020 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j =25 c t j = 125 c i d =10a 0 20 40 60 8 0 100 0.001 0.01 0.1 1 10 100 time (s) po w er ( w ) safe operating area, junction-to-ambient 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1s dc 10 s b v dss limited
document number: 68799 s09-1906-rev. b, 21-sep-09 www.vishay.com 5 vishay siliconix SIS426DN typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 1 8 36 54 72 90 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power, junction-to-case 0 13 26 39 52 65 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 68799 s09-1906-rev. b, 21-sep-09 vishay siliconix SIS426DN typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68799 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 1 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02 single p u lse 0.1
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